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US20200035838A1

Method of forming crystalline oxides on iii-v materials

University of Texas System

Abstract

A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Wei-E Wang
Priority date
August 17, 2016
Filing date
October 02, 2019
Publication date
January 30, 2020
Language
en
Metadata fetched
August 29, 2026 00:27