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US20210366771A1

Nanoscale-aligned three-dimensional stacked integrated circuit

University of Texas System

Abstract

A method for fabricating a three-dimensional (3D) stacked integrated circuit. Pick-and-place strategies are used to stack the source wafers with device layers fabricated using standard two-dimensional (2D) semiconductor fabrication technologies. The source wafers may be stacked in either a …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Sidlgata V. Sreenivasan
Priority date
December 22, 2017
Filing date
December 21, 2018
Publication date
November 25, 2021
Language
en
Metadata fetched
August 29, 2026 00:28