← All patents

US20210408324A1

Enhanced room temperature mid-ir leds with integrated semiconductor ' …

University of Texas System

Abstract

Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Daniel Wasserman
Priority date
June 26, 2020
Filing date
June 25, 2021
Publication date
December 30, 2021
Language
en
Metadata fetched
August 29, 2026 00:28