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US20220115503A1

Methods of Design and Use of High Mobility P-Type Metal Oxides

University of Texas System

Abstract

Provided by the inventive concept are electronic devices, such as semiconductor devices, including p-type oxide materials having and selected for having improved hole mobilities, band gaps, and phase stability, and methods for fabricating electronic devices having such p-type oxide materials.

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Kyeongjae Cho
Priority date
October 12, 2020
Filing date
October 12, 2020
Publication date
April 14, 2022
Language
en
Metadata fetched
August 29, 2026 00:29