← All patents

US20230187213A1

Nanofabrication of collapse-free high aspect ratio nanostructures

University of Texas System

Abstract

A method for fabricating silicon nanostructures. An etch uniformity improving layer is deposited on a substrate. A catalyst (e.g., thin film of Ti/Au) is deposited on the substrate or the etch uniformity improving layer, where the catalyst is contacting a portion of the substrate or the etch …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Sidlgata V. Sreenivasan
Priority date
May 05, 2020
Filing date
May 05, 2021
Publication date
June 15, 2023
Language
en
Metadata fetched
August 29, 2026 00:30