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US20240321353A1

Non-Volatile Memory Circuit with Self-Terminating Read Current

University of Texas System

Abstract

A non-volatile memory circuit includes a first transistor which has a first terminal coupled to a DC voltage supply and has a second terminal and a gate. The memory circuit includes a second transistor which has a first terminal coupled to a reference potential, a second terminal and a gate …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Naimul Hassan
Priority date
March 21, 2023
Filing date
March 20, 2024
Publication date
September 26, 2024
Language
en
Metadata fetched
August 29, 2026 00:32