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US20250087484A1

Gallium-Oxide-On-Silicon (GaOxS)

University of Texas System

Abstract

What is claimed is: 1 . A wafer comprising: a Si substrate; a buffer layer comprising a thin film of at least one of epitaxial strontium titanate (STO) or magnesium oxide (MgO) formed on the Si substrate; and a thin film comprising a gallium oxide formed on the buffer layer. 2 . The wafer of claim 1

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Alexander A. Demkov
Priority date
April 11, 2022
Filing date
October 10, 2024
Publication date
March 13, 2025
Language
en
Metadata fetched
August 29, 2026 00:35