Method of making an ultra thin dielectric for electronic devices

Abstract

High quality, ultra thin (<30 Å) SiO 2 /Si 3 N 4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N 2 O-reoxidation (LRTNO) of Si 3 N 4 films. Si 3 N 4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) …