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US5675028A

Bisamido azides of gallium, aluminum and indium and their use as precursors for …

University of Texas System

Abstract

There are disclosed bisamido azides of gallium (Ga), aluminum (Al), or Indium (In) which when pyrolized in accordance with the invention, produce metal nitride films on a substrate. A representative example of a bisamido azide is bisdimethylamidogallium azide, (CH 3 )N) 2 GaN 3 .

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Deborah Ann Neumayer
Priority date
August 29, 1995
Filing date
August 29, 1995
Grant date
October 07, 1997
Publication date
October 07, 1997
Language
en
Metadata fetched
August 28, 2026 23:56