Floating gate transistor having buried strained silicon germanium channel layer

University of Texas System

University: University of Texas System
Assignee: Board Of Regents, The University Of Texas System
Inventor: David L. Kencke
Priority date: June 15, 2000
Filing date: June 15, 2000
Grant date: November 06, 2001
Publication date: November 06, 2001
Language: en
PDF source: https://patentimages.storage.googleapis.com/d6/16/f9/9397601ef01406/US6313486.pdf
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