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US7538538B2

Method of using a four terminal hybrid silicon/organic field effect sensor …

University of Texas System

Abstract

A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Ananth Dodabalapur
Priority date
December 01, 2005
Filing date
June 05, 2008
Grant date
May 26, 2009
Publication date
May 26, 2009
Language
en
Metadata fetched
August 29, 2026 00:18