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US8188460B2

Bi-layer pseudo-spin field-effect transistor

University of Texas System

Abstract

A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Sanjay K. Banerjee
Priority date
November 26, 2008
Filing date
November 24, 2009
Grant date
May 29, 2012
Publication date
May 29, 2012
Language
en
Metadata fetched
August 29, 2026 00:20