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US8896083B2

Depletion-mode field-effect transistor-based phototransitor

University of Texas System

Abstract

A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Yeul Na
Priority date
March 15, 2013
Filing date
March 15, 2013
Grant date
November 25, 2014
Publication date
November 25, 2014
Language
en
Metadata fetched
August 29, 2026 00:22