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US9048330B2

Three-dimensional gate-wrap-around field-effect transistor

University of Texas System

Abstract

A three-dimensional Gate-Wrap-Around Field-Effect Transistor (GWAFET). The GWAFET includes a substrate of III-V semiconductor material. The GWAFET further includes one or more channel layers with a gate wrapped around these one or more channel layers. Additionally, the GWAFET includes a barrier …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Jack C. Lee
Priority date
August 28, 2013
Filing date
August 28, 2013
Grant date
June 02, 2015
Publication date
June 02, 2015
Language
en
Metadata fetched
August 29, 2026 00:22