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US9343608B2

Depletion-mode field-effect transistor-based phototransistor

University of Texas System

Abstract

A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Yeul Na
Priority date
March 15, 2013
Filing date
August 15, 2014
Grant date
May 17, 2016
Publication date
May 17, 2016
Language
en
Metadata fetched
August 29, 2026 00:24