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US9368208B1

Non-volatile latch using magneto-electric and ferro-electric tunnel junctions

University of Texas System

Abstract

A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an …

University
University of Texas System
Assignee
Board Of Regents, The University Of Texas System
Inventor
Andrew Marshall
Priority date
April 20, 2015
Filing date
April 20, 2015
Grant date
June 14, 2016
Publication date
June 14, 2016
Language
en
Metadata fetched
August 29, 2026 00:23