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US9853135B2

Tunnel field effect transistor (TFET) with lateral oxidation

University of Texas System

Abstract

A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction …

University
University of Texas System
Assignee
The Board Of Regents Of The University Of Texas System
Inventor
Jack C. Lee
Priority date
October 14, 2011
Filing date
January 26, 2016
Grant date
December 26, 2017
Publication date
December 26, 2017
Language
en
Metadata fetched
August 29, 2026 00:24